Structural changes and tribological behaviors of nitrogen ion-implanted tantalum
Identifieur interne : 000602 ( Main/Exploration ); précédent : 000601; suivant : 000603Structural changes and tribological behaviors of nitrogen ion-implanted tantalum
Auteurs : W. J. Wang [République populaire de Chine] ; T. M. Wang [République populaire de Chine] ; X. J. Wang [République populaire de Chine]Source :
- Nuclear Inst. and Methods in Physics Research, B [ 0168-583X ] ; 1995.
Abstract
Single-crystal tantalum sheets were implanted by 110 keV nitrogen ions to a dose of 5 × 1017 ions/cm2 at a temperature less than 100°C. The structural changes and the concentration depth profiles of the implanted layers were characterized by glancing-angle X-ray diffraction (GXRD), selected area diffraction (SAD) and Auger electron spectroscopy (AES), respectively. The microhardness, the friction coefficient and the wear rate of the specimens against hardened GCri5 steel balls were also determined before and after the implantation. Scanning electron microscopy (SEM) and electron probe micro-analyzer (EPMA) were used to analyze the wear tracks. The results showed that there exist deviations between the characterization results, of AES and GXRD or SAD. The AES measurement suggests the formation of the tantalum nitrides with a maximun N/Ta ratio of 1/2, while the GXRD and SAD reveal the formation of bcc Ta(N). fcc TaN and a trace amount of hcp Ta2N. This can be explained by considering the inhomogeneous distribution of nitrogen atoms in micio-regions: the enrichment of nitrogen atoms in local micro-regions leads to the formation of fcc TaN; however, the unfavorable structural compatibility between bec Ta and hcp Ta2N hinders the formation of hcp Ta2N in the regions where the N/Ta ratio reaches 1/2. The detected trace amount of the hcp Ta2N phase in the implanted layers can be considered as an afier effect of nitrogen; loss from the originally formed nitrides. The results also showed that the tribological properties of the Ta surfaces were improved due to the implantation. It is believed that the implantation-induced Ta(N), fcc TaN, and hcp Ta2N phases are responsible for this improvement.
Url:
DOI: 10.1016/0168-583X(95)00980-9
Affiliations:
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J." last="Wang">W. J. Wang</name><affiliation wicri:level="1"><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Materials Science, Lanzhou University, Lanzhou 730000</wicri:regionArea><wicri:noRegion>Lanzhou 730000</wicri:noRegion></affiliation></author><author><name sortKey="Wang, T M" sort="Wang, T M" uniqKey="Wang T" first="T. M." last="Wang">T. M. Wang</name><affiliation wicri:level="1"><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Materials Science, Lanzhou University, Lanzhou 730000</wicri:regionArea><wicri:noRegion>Lanzhou 730000</wicri:noRegion></affiliation></author><author><name sortKey="Wang, X J" sort="Wang, X J" uniqKey="Wang X" first="X. J." last="Wang">X. J. Wang</name><affiliation wicri:level="1"><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Materials Science, Lanzhou University, Lanzhou 730000</wicri:regionArea><wicri:noRegion>Lanzhou 730000</wicri:noRegion></affiliation></author></analytic><monogr></monogr><series><title level="j">Nuclear Inst. and Methods in Physics Research, B</title><title level="j" type="abbrev">NIMB</title><idno type="ISSN">0168-583X</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1995">1995</date><biblScope unit="volume">108</biblScope><biblScope unit="issue">3</biblScope><biblScope unit="page" from="300">300</biblScope><biblScope unit="page" to="304">304</biblScope></imprint><idno type="ISSN">0168-583X</idno></series><idno type="istex">CFF0DFB6FE8DCF7415C7C5F568E7D7B9DF95EC46</idno><idno type="DOI">10.1016/0168-583X(95)00980-9</idno><idno type="PII">0168-583X(95)00980-9</idno><idno type="ArticleID">95009809</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0168-583X</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Single-crystal tantalum sheets were implanted by 110 keV nitrogen ions to a dose of 5 × 1017 ions/cm2 at a temperature less than 100°C. The structural changes and the concentration depth profiles of the implanted layers were characterized by glancing-angle X-ray diffraction (GXRD), selected area diffraction (SAD) and Auger electron spectroscopy (AES), respectively. The microhardness, the friction coefficient and the wear rate of the specimens against hardened GCri5 steel balls were also determined before and after the implantation. Scanning electron microscopy (SEM) and electron probe micro-analyzer (EPMA) were used to analyze the wear tracks. The results showed that there exist deviations between the characterization results, of AES and GXRD or SAD. The AES measurement suggests the formation of the tantalum nitrides with a maximun N/Ta ratio of 1/2, while the GXRD and SAD reveal the formation of bcc Ta(N). fcc TaN and a trace amount of hcp Ta2N. This can be explained by considering the inhomogeneous distribution of nitrogen atoms in micio-regions: the enrichment of nitrogen atoms in local micro-regions leads to the formation of fcc TaN; however, the unfavorable structural compatibility between bec Ta and hcp Ta2N hinders the formation of hcp Ta2N in the regions where the N/Ta ratio reaches 1/2. The detected trace amount of the hcp Ta2N phase in the implanted layers can be considered as an afier effect of nitrogen; loss from the originally formed nitrides. The results also showed that the tribological properties of the Ta surfaces were improved due to the implantation. It is believed that the implantation-induced Ta(N), fcc TaN, and hcp Ta2N phases are responsible for this improvement.</div></front></TEI><affiliations><list><country><li>République populaire de Chine</li></country></list><tree><country name="République populaire de Chine"><noRegion><name sortKey="Wang, W J" sort="Wang, W J" uniqKey="Wang W" first="W. J." last="Wang">W. J. Wang</name></noRegion><name sortKey="Wang, T M" sort="Wang, T M" uniqKey="Wang T" first="T. M." last="Wang">T. M. Wang</name><name sortKey="Wang, X J" sort="Wang, X J" uniqKey="Wang X" first="X. J." last="Wang">X. J. Wang</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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